10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE
These Power 2 A, 400 V NPN Bipolar Power Transistor is designed for high voltage power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Waiting.
13003 Transistor Amplifier Circuit Diagram
MJE13003 Product details. These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features.
10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE
NPN POWER TRANSISTOR LEAD CODE: 1) Base 2) Collector 3) Emitter MARKING: FULL PART NUMBER TO-126 CASE - MECHANICAL OUTLINE ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS td Resistive Load 0.1 s tr VCC=125V, IC=1.0A, IB1=IB2=0.2A 1.0 s ts tp=25s, Duty Cycle < 1.0% 4.0 s tf 0.7 s
13003 Transistor Stereo Amplifier Powerful Stereo Amplifier. YouTube
MJE13003 is an NPN silicon transistor mainly used for high-speed high voltage power switching applications. This chip is a three-terminal device where a small current at one terminal is used to produce a large current at the remaining terminals. The collector current is 1.5A which projects this device can support load up to 1.5A.
VOLTAGE REGULATOR USING TRANSISTORHOW TO MAKE LED DIMMER USING 13003 TRANSISTOR13003 PROJECTS
El transistor o BJT es un componente eléctrico semi-conductor que puede ser utilizado para el control adecuado del flujo de corriente eléctrica. En este caso, una pequeña cantidad de corriente en el conductor base, puede controlar una mayor cantidad de corriente entre el colector y el emisor. Es por ello que los transistores son muy.
THIDO MJE13003 Transistor NPN 1.5A 400V
Electrical ratings STX13003 2/11 Doc ID 7928 Rev 6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0, IB = 0.5 A, tP < 10 ms) V(BR)EBO V IC Collector current 1 A ICM Collector peak current (tP < 5 ms) 3 A IB Base current 0.5 A
13003 Power Transistor, NPN at Rs 1/piece in New Delhi ID 2851221531262
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode.
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Description. The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
MJE13003 Transistor 13003 TO220 Achei Componentes
Marking Code : 13003 ⚫ For switching and amplifier applications ⚫ Low collector saturation voltage 1 / 7 Equivalent Circuit 2.Collector 3. Emitter 1.Base. NPN Transistor www.pingjingsemi.com Revison：3.0 Feb-2022 Package Specifications The method of packaging (1,000PCS/Reel&7inches) SOT-89 8,000 pcs per box
Easy To Make Audio Amplifier From Transistor 13003 YouTube
13003 is a low cost and easily available transistor. It is built with a special technology that makes this transistor stable and reliable to work on high voltages with very high speed switching capabilities. The device is capable of handling collector-emitter voltage of 400V DC and collector-emitter voltage of 700V DC which makes it ideal to.
13003 Transistor 13003 Original Mosfet Power Transistor 13003 TO92 NPN Transistor Triode
MJE 13003 . Transistor bipolar de baja potencia, de encapsulado plástico, compuesto por silicio. Sumario. 1 Partes que lo componen; 2 Características; 3 Usos; 4 Fuentes; Partes que lo componen. El 13003 es un componente electrónico de amplio uso, puede manejar audio de baja, pero por sus características es muy utilizado en diversos tipos de.
MJE13003 Transistor 13003 TO220 Achei Componentes
STD13003. HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES. MEDIUM VOLTAGE CAPABILITY. LOW SPREAD OF DYNAMIC PARAMETERS. MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION. VERY HIGH SWITCHING SPEED.
13003 (MJE13003, KES13003) Transistor NPN 700V 1.5A
D13003 Datasheet. Part #: D13003. Datasheet: 108Kb/3P. Manufacturer: Continental Device India Limited. Description: NPN SILICON POWER TRANSISTOR. 1 Results.
Original Power E13003 Switching D13003 Mosfet Mje13003 Transistor 13003 China Transistor 13003
Silicon Power Transistor. These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features.
Como probar transistores de la serie 13003 a 13007 (primera parte) YouTube
0.2. Size:148K philips phe13003a.pdf PHE13003ANPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters.
Transistor NPN MJE13003 aelectronics
These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator's, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features. VCEO(sus) 400 V.